Power semiconductor module using a bonding film with anisotropic thermal conduction

Article history: Received 30 May 2012 Accepted 24 June 2012 Available online 12 August 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.087 ⇑ Tel.: +81 52 612 6111; fax: +81 52 612 5623. E-mail address: [email protected] A power semiconductor module using a bonding film with anisotropic thermal conduction has been studied. The bonding film consists of polyamide with a low Young’s modulus and Z-axis-oriented fine graphite fibers. All the materials of this device, including the insulated substrate and base plate, have low coefficients of thermal expansion. The bonding film is inserted between the baseplate and an aluminum active heatsink. No significant changes in the thermal resistance or cross-sectional microscopy images were found after thermal cycling tests. 2012 Elsevier Ltd. All rights reserved.